Photomask blank and photomask
US8012654B2 · kind B2 · utility
9Cited by
9References
22Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jun 22, 2010 |
| Grant date | Sep 6, 2011 |
| Priority date | — |
| Expiry date | Jun 22, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31616
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.