Method of forming a light activated silicon controlled switch
US8012775B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Sep 15, 2010 |
| Grant date | Sep 6, 2011 |
| Priority date | — |
| Expiry date | Sep 15, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/263
Abstract
The present invention provides a method of forming an optically triggered switch. Embodiments of the method include forming a silicon layer, forming one or more trenches in the silicon layer, and forming one or more silicon diodes in the silicon layer. Embodiments of the method also include forming a first thyristor in the silicon layer such that the first thyristor is physically and electrically isolated from the silicon diode(s) by the trench(es). The first thyristor is configured to turn on in response to electromagnetic radiation generated by the silicon diode(s).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.