Patent · US Active

Method of fabricating semiconductor laser

US8012780B2 · kind B2 · utility

2Cited by
5References
20Claims
0Family size

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Key dates

Filing dateJul 10, 2008
Grant dateSep 6, 2011
Priority date—
Expiry dateAug 16, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01S5/2009
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

There is provided a method of fabricating a semiconductor laser including a two-dimensional photonic crystal. The method comprises the steps of growing an InX1Ga1−X1N (0<X1<1) layer on a gallium nitride-based semiconductor region in a reactor; after taking out a substrate product including the InX1Ga1−X1N layer from the reactor, forming a plurality of openings for a two-dimensional diffraction grating of the two-dimensional photonic crystal in the InX1Ga1−X1N layer to form a patterned InX1Ga1−X1N layer; and growing an AlX2Ga1−X2N (0≦X2≦1) layer on a top surface of the patterned InX1Ga1−X1N layer to form voids associated with the openings.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.