Method of fabricating an integrated CMOS-MEMS device
US8012785B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 24, 2009 |
| Grant date | Sep 6, 2011 |
| Priority date | — |
| Expiry date | Aug 3, 2029 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2203/0728
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
An embodiment of a method is provided that includes providing a substrate having a frontside and a backside. A CMOS device is formed on the substrate. A MEMS device is also formed on the substrate. Forming the MEMS device includes forming a MEMS mechanical structure on the frontside of the substrate. The MEMS mechanical structure is then released. A protective layer is formed on the frontside of the substrate. The protective layer is disposed on the released MEMS mechanical structure (e.g., protects the MEMS structure). The backside of the substrate is processed while the protective layer is disposed on the MEMS mechanical structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.