Process for forming dielectric films
US8012822B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 23, 2008 |
| Grant date | Sep 6, 2011 |
| Priority date | — |
| Expiry date | Jun 2, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for forming dielectric films containing at least metal atoms, silicon atoms, and oxygen atoms on a silicon substrate comprises a first step of oxidizing a surface portion of the silicon substrate to form a silicon dioxide film; a second step of forming a metal film on the silicon dioxide film in a non-oxidizing atmosphere; a third step of heating in a non-oxidizing atmosphere to diffuse the metal atoms constituting the metal film into the silicon dioxide film; and a fourth step of oxidizing the silicon dioxide film containing the diffused metal atoms to form the film containing the metal atoms, silicon atoms, and oxygen atoms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.