Transistors with gate stacks having metal electrodes
US8012863B2 · kind B2 · utility
0Cited by
5References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 6, 2006 |
| Grant date | Sep 6, 2011 |
| Priority date | — |
| Expiry date | Jul 9, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/0385
Abstract
A transistor with a gate stack having a metal electrode and a method for forming the same. The method includes providing a structure which includes (a) a substrate, (b) a gate dielectric layer on the substrate, and (c) a gate layer on the gate dielectric layer. The gate layer includes an oxidized layer. The oxidized layer comprises an oxidized material. Then, the structure is exposed to a first plasma resulting in removal of oxygen atoms from molecules of the oxidized material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.