Inventor · Beacon, NY, US

Michael P. Chudzik

131Patents
16h-index
182Co-inventors
89Inventor score

Filing activity: Jul 20, 2000 → Jan 9, 2020

Most-cited inventions

PatentTitleAreaCited byStatus
US7030481B2 High density chip carrier with integrated passive devices Electricity 320 Expired
US6962872B2 High density chip carrier with integrated passive devices Electricity 298 Expired
US7622341B2 Sige channel epitaxial development for high-k PFET manufacturability Electricity 120 Active
US6930060B2 Method for forming a uniform distribution of nitrogen in silicon oxynitride gate dielectric Electricity 76 Expired
US8138037B2 Method and structure for gate height scaling with high-k/metal gate technology Electricity 40 Active
US7091118B1 Replacement metal gate transistor with metal-rich silicon layer and method for making the same Electricity 36 Expired
US6451662B1 Method of forming low-leakage on-chip capacitor Electricity 35 Expired
US7741188B2 Deep trench (DT) metal-insulator-metal (MIM) capacitor Emerging Cross-Sectional Technologies 28 Active
US6361598B1 Method for preparing high temperature superconductor Chemistry; Metallurgy 23 Expired
US7838908B2 Semiconductor device having dual metal gates and method of manufacture Electricity 23 Active
US8373239B2 Structure and method for replacement gate MOSFET with self-aligned contact using sacrificial mandrel dielectric Electricity 23 Active
US6555430B1 Process flow for capacitance enhancement in a DRAM trench Emerging Cross-Sectional Technologies 21 Expired
US8354309B2 Method of providing threshold voltage adjustment through gate dielectric stack modification Electricity 20 Active
US7863126B2 Fabrication of a CMOS structure with a high-k dielectric layer oxidizing an aluminum layer in PFET region Electricity 20 Active
US7504700B2 Method of forming an ultra-thin [[HfSiO]] metal silicate film for high performance CMOS applications and semiconductor structure formed in said method Electricity 18 Expired
US8232148B2 Structure and method to make replacement metal gate and contact metal Electricity 16 Active
US9679810B1 Integrated circuit having improved electromigration performance and method of forming same Electricity 16 Active
US7732872B2 Integration scheme for multiple metal gate work function structures Electricity 16 Active
US7750418B2 Introduction of metal impurity to change workfunction of conductive electrodes Electricity 16 Active
US6905944B2 Sacrificial collar method for improved deep trench processing Electricity 16 Expired
US7754594B1 Method for tuning the threshold voltage of a metal gate and high-k device Electricity 16 Active
US8420473B2 Replacement gate devices with barrier metal for simultaneous processing Electricity 16 Active
US9437496B1 Merged source drain epitaxy Electricity 15 Active
US7446380B2 Stabilization of flatband voltages and threshold voltages in hafnium oxide based silicon transistors for CMOS Electricity 14 Expired
US6664161B2 Method and structure for salicide trench capacitor plate electrode Electricity 14 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.