Method for providing temperature uniformity of rapid thermal annealing
US8012873B1 · kind B1 · utility
2Cited by
3References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 11, 2009 |
| Grant date | Sep 6, 2011 |
| Priority date | — |
| Expiry date | Oct 12, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for annealing a semiconductor device having at least one polysilicon region formed on a substrate, comprises growing dielectric material on the substrate adjacent to the polysilicon region. The method continues by polishing a surface of the dielectric material and by depositing a layer of a semi-transparent material on both the surface of the dielectric material and the surface of the polysilicon region. The method concludes by annealing the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.