Nicholas K. Eib
30Patents
13h-index
33Co-inventors
77Inventor score
Filing activity: Mar 6, 1995 → Dec 20, 2012
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5705301A | Performing optical proximity correction with the aid of design rule checkers | Physics | 324 | Expired |
| US6425117B1 | System and method for performing optical proximity correction on the interface between optical proximity corrected cells | Physics | 305 | Expired |
| US5682323A | System and method for performing optical proximity correction on macrocell libraries | Physics | 304 | Expired |
| US6269472A | Optical proximity correction method and apparatus | Electricity | 287 | Expired |
| US6282696A | Performing optical proximity correction with the aid of design rule checkers | Physics | 236 | Expired |
| US5723233A | Optical proximity correction method and apparatus | Physics | 217 | Expired |
| US5900338A | Performing optical proximity correction with the aid of design rule checkers | Physics | 61 | Expired |
| US6499003B2 | Method and apparatus for application of proximity correction with unitary segmentation | Physics | 54 | Expired |
| US6413881B1 | PROCESS FOR FORMING THIN GATE OXIDE WITH ENHANCED RELIABILITY BY NITRIDATION OF UPPER SURFACE OF GATE OF OXIDE TO FORM BARRIER OF NITROGEN ATOMS IN UPPER SURFACE REGION OF GATE OXIDE, AND RESULTING PRODUCT | Electricity | 37 | Expired |
| US6109775A | Method for adjusting the density of lines and contact openings across a substrate region for improving the chemical-mechanical polishing of a thin-film later disposed thereon | Electricity | 31 | Expired |
| US5893952A | Apparatus for rapid thermal processing of a wafer | Emerging Cross-Sectional Technologies | 18 | Expired |
| US6175953A | Method and apparatus for general systematic application of proximity correction | Physics | 16 | Expired |
| US5897381A | Method of forming a layer and semiconductor substrate | Emerging Cross-Sectional Technologies | 14 | Expired |
| US5756369A | Rapid thermal processing using a narrowband infrared source and feedback | Emerging Cross-Sectional Technologies | 11 | Expired |
| US6532585B1 | Method and apparatus for application of proximity correction with relative segmentation | Physics | 8 | Expired |
| US7313508B2 | Process window compliant corrections of design layout | Physics | 8 | Expired |
| US6174630A | Method of proximity correction with relative segmentation | Physics | 8 | Expired |
| US6809824B1 | Alignment process for integrated circuit structures on semiconductor substrate using scatterometry measurements of latent images in spaced apart test fields on substrate | Electricity | 7 | Expired |
| US7189498B2 | Process and apparatus for generating a strong phase shift optical pattern for use in an optical direct write lithography process | Physics | 6 | Expired |
| US7372547B2 | Process and apparatus for achieving single exposure pattern transfer using maskless optical direct write lithography | Physics | 5 | Expired |
| US7264906B2 | OPC based illumination optimization with mask error constraints | Physics | 3 | Expired |
| US7270942B2 | Optimized mirror design for optical direct write | Physics | 2 | Expired |
| US7499146B2 | Lithographic apparatus and device manufacturing method, an integrated circuit, a flat panel display, and a method of compensating for cupping | Physics | 2 | Active |
| US8012873B1 | Method for providing temperature uniformity of rapid thermal annealing | Electricity | 2 | Active |
| US6759337B1 | Process for etching a controllable thickness of oxide on an integrated circuit structure on a semiconductor substrate using nitrogen plasma and plasma and an rf bias applied to the substrate | Electricity | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.