Patent · US Active

Memory circuit

US8015438B2 · kind B2 · utility

16Cited by
5References
21Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 29, 2007
Grant dateSep 6, 2011
Priority date
Expiry dateJan 9, 2030

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2229/726
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

The invention provides a memory circuit comprising a plurality of storage cells for storing data and redundant spare storage cells for replacing defective storage cells, and a memory access logic for accessing said storage cells connected to a replacement setting register which is writeable during operation of said memory circuit to store replacement settings.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.