Patent · US Active

Hafnium oxide ALD process

US8016945B2 · kind B2 · utility

6Cited by

9References

7Claims

0Family size

Assignee

Applied Materials, Inc. · US

Inventors

Thomas Werner ZILBAUER · Alzenau, DE
Ignaz Eisele · Icking, DE
Jan Matusche · Dresden, DE
Ursula Ingeborg Schmidt · Dresden, DE

Key dates

Filing date	Dec 21, 2007
Grant date	Sep 13, 2011
Priority date	—
Expiry date	Mar 11, 2030

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC23C16/45525
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A method and apparatus for performing ALD deposition of hafnium oxide on a substrate is provided. The apparatus includes a process chamber, a precursor delivery subsystem, an oxidizer delivery subsystem, a purge gas subsystem, a solvent flush subsystem, and optional solvent recovery and purification subsystems. The method includes pulsing precursor compounds into the process chamber in sequence. While one precursor is pulsed, purge gas is provided through the other precursor line. After pulsing, precursor lines are purged, and the chamber is evacuated and purged. A solvent flush step is employed to remove precursor deposits that build up in piping over time.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.