Method of increasing etchability of metals having chemical etching resistant microstructure

US8017028B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Mark Crockett · Foster City, US
• John W. Lane · Austin, US
• Micahel DeChellis · Austin, US
• Chris Melcer · Sunnyvale, US
• Erica Porras · San Jose, US
• Aneesh Khullar · Sunnyvale, US
• Balarabe Mohammed · Union City, US

Key dates

• Filing date: Oct 14, 2008
• Grant date: Sep 13, 2011
• Expiry date: Jan 30, 2030

Classification

• Technology area (CPC F): Mechanical Engineering; Lighting; Heating
• CPC primary: F16K2099/0076
• WIPO field: Mechanical elements
• WIPO sector: Mechanical engineering

Abstract

A space-conserving integrated fluid delivery system which is particularly useful for gas distribution in semiconductor processing equipment. The invention also includes an integrated fluid flow network architecture, which may include, in addition to a layered substrate containing fluid flow channels, various fluid handling and monitoring components. The layered substrate is diffusion bonded, and the various fluid handling and monitoring components may be partially integrated or fully integrated into the substrate, depending on design and material requirements.