Method for depositing thin films by mixed pulsed CVD and ALD

US8017182B2 · kind B2 · utility

Assignee

• ASM International N.V. · NL

Inventors

• Menso Hendriks · Bilthoven, NL
• Martin Knapp · Dieburg, DE
• Suvi Haukka · Helsinki, FI

Key dates

• Filing date: Jun 21, 2007
• Grant date: Sep 13, 2011
• Expiry date: Jun 28, 2029

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C16/45523
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Films are deposited on a substrate by a process in which atomic layer deposition (ALD) is used to deposit one layer of the film and pulsed chemical vapor deposition (CVD) is used to deposit another layer of the film. During the ALD part of the process, a layer is formed by flowing sequential and alternating pulses of mutually reactive reactants that deposit self-limitingly on a substrate. During the pulsed CVD part of the process, another layer is deposited by flowing two CVD reactants into a reaction chamber, with at least a first of the CVD reactants flowed into the reaction chamber in pulses, with those pulses overlapping at least partially with the flow of a second of the CVD reactants. The ALD and CVD parts of the process ca be used to deposit layers with different compositions, thereby forming, e.g., nanolaminate films. Preferably, high quality layers are formed by flowing the second CVD reactant into the reaction chamber for a longer total duration than the first CVD reactant. In some embodiments, the pulses of the third reactant at separated by a duration at least about 1.75 times the length of the pulse. Preferably, less than about 8 monolayers of material are deposited pe…