Backside-illuminated (BSI) image sensor with backside diffusion doping
US8017427B2 · kind B2 · utility
34Cited by
2References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 31, 2008 |
| Grant date | Sep 13, 2011 |
| Priority date | — |
| Expiry date | Nov 14, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/806
Abstract
Embodiments of a process comprising forming a pixel on a front side of a substrate, thinning the substrate, depositing a doped silicon layer on a backside of the thinned substrate, and diffusing a dopant from the doped silicon layer into the substrate. Embodiments of an apparatus comprising a pixel formed on a front side of a thinned substrate, a doped silicon layer formed on a backside of the thinned substrate, and a region in the thinned substrate, and near the backside, where a dopant has diffused from the doped silicon layer into the thinned substrate. Other embodiments are disclosed and claimed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.