Fuse of semiconductor device and method for forming the same
US8017454B2 · kind B2 · utility
0Cited by
2References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 17, 2008 |
| Grant date | Sep 13, 2011 |
| Priority date | — |
| Expiry date | Jul 15, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a fuse of a semiconductor device includes performing an ion-implanting process at sides of a fuse blowing region of a metal fuse, thereby increasing the concentration of impurity ions of a thermal transmission path region. In a subsequent laser blowing process, as a result of the increased resistance of metal fuse the electric and thermal conductivity is reduced, thereby increasing the thermal condensation efficiency of the fuse blowing region and improving the efficiency of the laser blowing process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.