Manufacturing method of a NOR flash memory with phosphorous and arsenic ion implantations
US8017488B2 · kind B2 · utility
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5Claims
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Key dates
| Filing date | Sep 18, 2009 |
| Grant date | Sep 13, 2011 |
| Priority date | — |
| Expiry date | Jan 23, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/914
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing method of a NOR flash memory with phosphorous and arsenic ion implantations mainly implants both phosphorous and arsenic ions on a drain area of a transistor memory unit, and controls specific energy and dosage for the implantation to reduce the defects of a memory device and improve the yield rate of the NOR flash memory.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.