Field effect structure including carbon alloyed channel region and source/drain region not carbon alloyed

US8017489B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• William F. Clark, Jr. · South Burlington, US
• Ephrem G. Gebgreselasie · Shelburne, US
• Xuefeng Liu · Gaithersburg, US
• Robert R. Robison · Colchester, US

Key dates

• Filing date: Mar 13, 2008
• Grant date: Sep 13, 2011
• Expiry date: Dec 7, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/601

Abstract

A semiconductor structure and a method for fabricating the semiconductor structure provide a field effect device structure. The field effect device structure includes a gate electrode located over a channel region within a semiconductor substrate that separates a plurality of source and drain regions within the semiconductor substrate. The channel region includes a surface layer that comprises a carbon doped semiconductor material. The source and drain regions include a surface layer that comprises a semiconductor material that is not carbon doped. The particular selection of material for the channel region and source and drain regions provide for inhibited dopant diffusion and enhanced mechanical stress within the channel region, and thus enhanced performance of the field effect device.