Inventor · Colchester, VT, US

Robert R. Robison

146Patents
8h-index
117Co-inventors
79Inventor score

Filing activity: Mar 13, 2008 → Jul 26, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US9859421B1 Vertical field effect transistor with subway etch replacement metal gate Electricity 23 Active
US9728466B1 Vertical field effect transistors with metallic source/drain regions Electricity 18 Active
US9530798B1 High performance heat shields with reduced capacitance Electricity 12 Active
US9318622B1 Fin-type PIN diode array Emerging Cross-Sectional Technologies 10 Active
US10096607B1 Three-dimensional stacked junctionless channels for dense SRAM Electricity 10 Active
US10170584B2 Nanosheet field effect transistors with partial inside spacers Electricity 9 Active
US9240406B2 Precision trench capacitor Electricity 8 Active
US8685817B1 Metal gate structures for CMOS transistor devices having reduced parasitic capacitance Electricity 8 Active
US8815669B2 Metal gate structures for CMOS transistor devices having reduced parasitic capacitance Electricity 7 Active
US8361872B2 High performance low power bulk FET device and method of manufacture Electricity 7 Active
US9059203B2 Semiconductor-on-insulator (SOI) structure with selectivity placed sub-insulator layer void(s) and method of forming the SOI structure Electricity 6 Active
US10128347B2 Gate-all-around field effect transistor having multiple threshold voltages Electricity 6 Active
US8610211B2 Semiconductor-on-insulator (SOI) structure with selectively placed sub-insulator layer void(s) and method of forming the SOI structure Electricity 5 Active
US8110483B2 Forming an extremely thin semiconductor-on-insulator (ETSOI) layer Electricity 5 Active
US9911804B1 Vertical fin field effect transistor with air gap spacers Electricity 5 Active
US10170485B2 Three-dimensional stacked junctionless channels for dense SRAM Electricity 4 Active
US8686508B2 Structures, methods and applications for electrical pulse anneal processes Electricity 4 Active
US8530319B2 Vertical silicide e-fuse Electricity 4 Active
US8053870B2 Semiconductor structure incorporating multiple nitride layers to improve thermal dissipation away from a device and a method of forming the structure Electricity 4 Active
US10381437B2 Semiconductor device and method of forming the semiconductor device Electricity 4 Active
US8486796B2 Thin film resistors and methods of manufacture Electricity 4 Active
US8017489B2 Field effect structure including carbon alloyed channel region and source/drain region not carbon alloyed Electricity 4 Active
US9917196B1 Semiconductor device and method of forming the semiconductor device Electricity 4 Active
US8470682B2 Methods and structures for increased thermal dissipation of thin film resistors Electricity 3 Active
US8637871B2 Asymmetric hetero-structure FET and method of manufacture Electricity 3 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.