Component of quartz glass for use in semiconductor manufacture and method for producing the same

US8017536B2 · kind B2 · utility

Assignees

• HERAEUS QUARZGLAS GMBH & CO. KG · DE
• SHIN-ETSU QUARTZ PRODUCTS CO., LTD. · JP

Inventors

• Juergen Weber · Erlangen, DE
• Tatsuhiro Sato · Inagi, JP
• Ralf Schneider · Birkenfeld, DE
• Achim Hofmann · Polling, DE
• Christian Gebauer · Hanau, DE

Key dates

• Filing date: Sep 4, 2007
• Grant date: Sep 13, 2011
• Expiry date: Jan 15, 2028

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C03C2203/54
• WIPO field: Other special machines
• WIPO sector: Mechanical engineering

Abstract

The invention starts from a known component of quartz glass for use in semiconductor manufacture, which component at least in a near-surface region shows a co-doping of a first dopant and of a second oxidic dopant, said second dopant containing one or more rare-earth metals in a concentration of 0.1-3% by wt. each (based on the total mass of SiO2 and dopant). Starting from this, to provide a quartz glass component for use in semiconductor manufacture in an environment with etching action, which component is distinguished by both high purity and high resistance to dry etching and avoids known drawbacks caused by co-doping with aluminum oxide, it is suggested according to the invention that the first dopant should be nitrogen and that the mean content of metastable hydroxyl groups of the quartz glass is less than 30 wtppm.