Patent · US Active

Detector

US8017902B2 · kind B2 · utility

3Cited by

0References

19Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Achim Gratz · Dresden, DE
Norbert Thyssen · Dresden, DE

Key dates

Filing date	Dec 12, 2008
Grant date	Sep 13, 2011
Priority date	—
Expiry date	Dec 17, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH10F39/1843
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A detector includes a first semiconductor substrate and a second substrate, wherein the first semiconductor substrate includes a detector element for detecting a radiation or a particle and the second substrate includes a control circuit. The detector element extends from a first main surface of the first semiconductor substrate to a second main surface of the first semiconductor substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.