Semiconductor device
US8018014B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 29, 2008 |
| Grant date | Sep 13, 2011 |
| Priority date | — |
| Expiry date | Nov 26, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
Abstract
A semiconductor device according to the present invention includes a semiconductor substrate: a photodiode responsive to a light, which is formed in the semiconductor substrate; at least an interlayer insulating layer formed over the semiconductor substrate, the at least an interlayer insulating layer comprising an upper most insulating layer; at least a conductive wiring layer, comprising an upper most conductive wiring layer formed on the upper most insulating layer; and a first passivation layer formed over the upper-most conductive wiring layer. The upper-most wiring layer is not formed directly above the photodiode. The first passivation layer is made of a permeability-resist material and is not formed directly above the photodiode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.