Temperature sensing device
US8018018B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 10, 2006 |
| Grant date | Sep 13, 2011 |
| Priority date | — |
| Expiry date | Jun 11, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/127
Abstract
The present invention relates to an integrated device, comprising a semiconductor device formed on a semiconductor substrate, a temperature sensing element formed within a semi-conductive layer formed on the semiconductor substrate, an electrically insulating layer formed over the semi-conductive layer, a metal layer formed over the insulation layer and forming an electrical contact of the semiconductor device, and a thermal contact extending from the metal layer through the electrically insulating layer to a first region of the semi-conductive layer, wherein the first region of the semi-conductive layer is electrically isolated from the temperature sensing element. The present invention also relates to a method of forming a temperature sensing element for integration with a semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.