Semiconductor device and method for manufacturing the same
US8018028B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 29, 2010 |
| Grant date | Sep 13, 2011 |
| Priority date | — |
| Expiry date | Dec 29, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/983
Abstract
A semiconductor device includes a semiconductor substrate, a cell region, an outer peripheral region, a field plate, an outermost peripheral ring, outer peripheral region layer, an insulator film, and a Zener diode. The semiconductor substrate has a superjunction structure. The outer peripheral region is disposed at an outer periphery of the cell region. The Zener diode is disposed on the insulator film for electrically connecting the field plate with the outermost peripheral ring. The Zener diode has a first conductivity type region and a second conductivity type region that are alternately arranged in a direction from the cell region to the outer peripheral region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.