MOS transistors formed on the front and back surface of a semiconductor substrate
US8018031B2 · kind B2 · utility
Assignees
Inventor
Key dates
| Filing date | May 28, 2008 |
| Grant date | Sep 13, 2011 |
| Priority date | — |
| Expiry date | Nov 21, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/101
Abstract
The invention realizes low on-resistance and high current flow in a semiconductor device in which a current flows in a thickness direction of a semiconductor substrate. A first MOS transistor having first gate electrodes and first source layers is formed on a front surface of a semiconductor substrate, and a second MOS transistor having second gate electrodes and second source layers is formed on a back surface thereof. A drain electrode connected to the semiconductor substrate, a first source electrode connected to the first source layers, a second source electrode connected to the second source layers, and a first penetration hole penetrating the semiconductor substrate are further formed. A first wiring connecting the first source electrode and the second source electrode is formed in the first penetration hole. The semiconductor substrate serves as a common drain region of the first and second MOS transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.