Patent · US Active

Production of a self-aligned CuSiN barrier

US8018062B2 · kind B2 · utility

0Cited by

4References

19Claims

0Family size

Assignee

STMicroelectronics SA

Inventors

Pierre Caubet · Le Versoud, FR
Nicolas Casanova · Crolles, FR

Key dates

Filing date	Jan 28, 2010
Grant date	Sep 13, 2011
Priority date	—
Expiry date	Apr 29, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/76856
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor product includes a portion made of copper, a portion made of a dielectric and a self-aligned barrier between the copper portion and the dielectric portion. The self-aligned barrier includes a first copper silicide layer comprising predominantly first copper silicide molecules, and a second copper silicide layer comprising predominantly second copper silicide molecules. The proportion of the number of silicon atoms is higher in the second silicide molecules than in the first silicide molecules. The second copper silicide layer is positioned between the copper portion and the first copper silicide layer. A nitride layer may overlie at least part of the first copper silicide layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.