Non-volatile memory circuit using ferroelectric capacitor storage element
US8018754B1 · kind B1 · utility
3Cited by
7References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 14, 1990 |
| Grant date | Sep 13, 2011 |
| Priority date | — |
| Expiry date | Sep 14, 2010 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/5657
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile memory cell and related system utilize ferroelectric capacitors as data storage elements. Circuitry is provided for writing to a single ferroelectric capacitor storage element, as well as to dual storage elements operating inversely. The storage elements are read by use of a sense amplifier in a configuration which automatically restores the original data states, thereby eliminating the need for a subsequent restore operation. Memory systems are described which include circuitry for driving bit lines, word lines and drive lines to accomplish both the write and read operations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.