Substrate processing method, substrate processing apparatus, and program storage medium
US8020315B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 6, 2007 |
| Grant date | Sep 20, 2011 |
| Priority date | — |
| Expiry date | Jan 10, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67248
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate processing method which can reduce the number of particles to be left on each substrate is provided. In the substrate processing method, substrates W to be processed are dried, by using a fluid heated by a heating apparatus having one or more heating mechanisms. The substrate processing method comprises a first step of supplying a mixed fluid containing a gas and a processing liquid and heated by the heating apparatus, into a processing chamber in which the substrates to be processed are placed, and a second step of supplying the heated gas into the processing chamber. The output of at least one of the heating mechanisms is kept at a preset constant value for a period of time during which a predetermined time passes after the start of the first step. In the second step, the output of the heating mechanism is determined under a feed back control.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.