Patent · US Active

Method of manufacturing a semiconductor device

US8021919B2 · kind B2 · utility

1Cited by

3References

19Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Manfred Mengel · Bad Abbach, DE
Thomas Spoettl · Mintraching, DE
Frank Pueschner · Kelheim, DE
Louis Vervoort · Pielenhofen, DE

Key dates

Filing date	Mar 31, 2009
Grant date	Sep 20, 2011
Priority date	—
Expiry date	Mar 31, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/181
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of manufacturing a semiconductor device or a substrate is described. The method includes providing a chip attached to a carrier or providing a substrate. A foil is held over the chip and the carrier or the substrate. A laser beam is directed onto the foil, and substance at the foil is ablated and deposited on the chip and the carrier or on the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.