High aspect ratio gap fill application using high density plasma chemical vapor deposition
US8021992B2 · kind B2 · utility
20Cited by
11References
18Claims
0Family size
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Key dates
| Filing date | Sep 1, 2005 |
| Grant date | Sep 20, 2011 |
| Priority date | — |
| Expiry date | Jun 20, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76837
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A high density plasma chemical vapor deposition process including exciting gas mixture to create a plasma including ions, and directing the plasma into a dense region above the upper surface of the semiconductor wafer, heating the wafer using an additional heat source, and allowing a material from the plasma to deposit onto the semiconductor wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.