Patent · US Active

Semiconductor layer structure with superlattice

US8022392B2 · kind B2 · utility

2Cited by

25References

12Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Christoph Eichler · Donaustauf, DE
Alfred Lell · Maxhütte-Haidhof, DE
Andreas Miler · Kaufering, DE
Marc Schillgalies · Berlin, DE

Key dates

Filing date	Jul 20, 2007
Grant date	Sep 20, 2011
Priority date	—
Expiry date	Oct 12, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/811
WIPO fieldOptics
WIPO sectorInstruments

Abstract

The semiconductor layer structure includes an active layer and a superlattice composed of stacked layers of III-V compound semiconductors of a first and at least one second type. Adjacent layers of different types in the superlattice differ in composition with respect to at least one element. The layers have predefined layer thicknesses, such that the layer thicknesses of layers of the first type and of the layers of the second type increase from layer to layer with increasing distance from an active layer. An increasing layer thickness within the layers of the first and the second type is suitable for adapting the electrical, optical and epitaxial properties of the superlattice to given requirements in the best possible manner.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.