Nitride-based semiconductor device and method of manufacturing the same
US8022427B2 · kind B2 · utility
10Cited by
1References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 24, 2009 |
| Grant date | Sep 20, 2011 |
| Priority date | — |
| Expiry date | Apr 24, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A nitride-based semiconductor device includes a substrate, a first step portion formed on a main surface side of a first side end surface of the substrate, a second step portion formed on the main surface side of a second side end surface substantially parallel to the first side end surface on an opposite side of the first side end surface and a nitride-based semiconductor layer whose first side surface is a (000-1) plane starting from a first side wall of the first step portion and a second side surface starting from a second side wall of the second step portion on the main surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.