Integrated Schottky diode and power MOSFET
US8022446B2 · kind B2 · utility
3Cited by
3References
18Claims
0Family size
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Key dates
| Filing date | Jul 16, 2007 |
| Grant date | Sep 20, 2011 |
| Priority date | — |
| Expiry date | Jul 17, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/111
Abstract
A semiconductor structure includes a semiconductor substrate; a first well region of a first conductivity type in the semiconductor substrate; a metal-containing layer on the first well region, wherein the metal-containing layer and the first well region form a Schottky barrier; and a first heavily doped region of the first conductivity type in the first well region, wherein the first heavily doped region is horizontally spaced apart from the metal-containing layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.