Capacitors integrated with metal gate formation
US8022458B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 8, 2007 |
| Grant date | Sep 20, 2011 |
| Priority date | — |
| Expiry date | Mar 3, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure including a capacitor having increased capacitance and improved electrical performance is provided. The semiconductor structure includes a substrate; and a capacitor over the substrate. The capacitor includes a first layer including a first capacitor electrode and a second capacitor electrode, wherein the first capacitor electrode is formed of a metal-containing material and is free from polysilicon. The semiconductor structure further includes a MOS device including a gate dielectric over the substrate; and a metal-containing gate electrode on the gate dielectric, wherein the metal-containing gate electrode is formed of a same material, and has a same thickness, as the first capacitor electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.