Semiconductor device with a trench gate structure and method for the production thereof

US8022470B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventor

• Franz Hirler · Isen, DE

Key dates

• Filing date: Sep 4, 2008
• Grant date: Sep 20, 2011
• Expiry date: Aug 14, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/519

Abstract

A semiconductor device with a trench gate structure includes a semiconductor body with switching electrodes. At least gate electrode controls the off state and the on state between the switching electrodes. The at least one gate electrode in the trench gate structure controls at least one vertical switching channel through at least one body zone. The trench gate structure includes at least one trench with side walls, wherein the at least one gate electrode, which is insulated against the side walls in the region of the at least one body zone alternately by at least one gate oxide section and at least one trench oxide section and forms a switching channel with a gate oxide section in the at least one region, is located in the at least one trench.