Patent · US Active

Semiconductor device

US8022474B2 · kind B2 · utility

19Cited by

2References

17Claims

0Family size

Assignee

Infineon Technologies Austria AG · AT

Inventors

Oliver Haeberlen · Villach, AT
Joachim Krumrey · Eisenlohrsweg, AT
Franz Hirler · Isen, DE
Walter Rieger · Arnoldstein, AT

Key dates

Filing date	Sep 30, 2008
Grant date	Sep 20, 2011
Priority date	—
Expiry date	Aug 13, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/667
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a source metallization, a source region of a first conductivity type in contact with the source metallization, a body region of a second conductivity type which is adjacent to the source region. The semiconductor device further includes a first field-effect structure including a first insulated gate electrode and a second field-effect structure including a second insulated gate electrode which is electrically connected to the source metallization. The capacitance per unit area between the second insulated gate electrode and the body region is larger than the capacitance per unit area between the first insulated gate electrode and the body region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.