PIN diode structure with zinc diffusion region

US8022495B2 · kind B2 · utility

Assignee

• EMCORE CORPORATION · US

Inventors

• Xiang Gao · San Jose, US
• Alex Ceruzzi · Princeton Junction, US
• Linlin Liu · Fryeburg, US
• Stephen Schwed · Bound Brook, US

Key dates

• Filing date: Apr 8, 2009
• Grant date: Sep 20, 2011
• Expiry date: Jan 14, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F30/223

Abstract

A PIN photodiode having a substrate, a first type electrode layer disposed on the substrate, a first layer of intrinsic material disposed over a portion of the first-type electrode layer, and a first type window layer disposed over the intrinsic layer. An island shaped region of intrinsic material is disposed over the window layer and a dielectric layer is disposed over the island region and at least the peripheral portion of said island shaped region whereby an opening is formed in the island shaped region. A dopant is diffused through the opening so as to form a PN junction that extends into the first layer of intrinsic material.