Patent · US Active

Multi-pitch scatterometry targets

US8024676B2 · kind B2 · utility

9Cited by

19References

21Claims

0Family size

Assignee

TOKYO ELECTRON LIMITED · JP

Inventors

Michael A. Carcasi · Austin, US
David Dixon · Overland Park, US

Key dates

Filing date	Feb 13, 2009
Grant date	Sep 20, 2011
Priority date	—
Expiry date	Feb 13, 2030

Classification

Technology area (CPC G)Physics
CPC primaryG03F7/70641
WIPO fieldOptics
WIPO sectorInstruments

Abstract

The invention can provide a method of processing a substrate using multi-pitch scatterometry targets (M-PSTs) for de-convolving lithographic process parameters during Single-Patterning (S-P), Double-Patterning (D-P) procedures, and Double-Exposure (D-E) procedures used to control transistor structures. The M-PSTs) can have critical dimension (CD) and sidewall angle (SWA) sensitivity to exposure focus variations, exposure dose variations, and post exposure bake (PEB) temperature variations. In addition, the variation can be de-convolved so that the individual measurement process variable contributor can be identified.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.