Chemical mechanical polishing composition and methods relating thereto

US8025813B2 · kind B2 · utility

Assignee

• Rohm and Haas Electronic Materials CMP Holdings, Inc. · US

Inventors

• Zhendong Liu · Newark, US
• Yi Guo · Shanghai, CN
• Kancharla-Arun Kumar Reddy · Wilmington, US
• Guangyun Zhang · Furlong, US

Key dates

• Filing date: Nov 12, 2009
• Grant date: Sep 27, 2011
• Expiry date: Dec 25, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/31053
• WIPO field: Basic materials chemistry
• WIPO sector: Chemistry

Abstract

A chemical mechanical polishing composition useful for chemical mechanical polishing of a substrate, wherein the substrate comprises a silicon oxide material and a silicon nitride material; and methods of making and using the chemical mechanical polishing composition. The chemical mechanical polishing composition comprises, as initial components: at least one of a first substance and a second substance; wherein the first substance is according to formula Iwherein the second substance is according to formula IIan abrasive; and water.