Method of fabricating semiconductor substrate and method of fabricating light emitting device
US8026119B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 26, 2010 |
| Grant date | Sep 27, 2011 |
| Priority date | — |
| Expiry date | Aug 26, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02488
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.