Method of forming flash memory device
US8026140B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 26, 2008 |
| Grant date | Sep 27, 2011 |
| Priority date | — |
| Expiry date | Apr 21, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/30
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a method of forming a flash memory device, which is capable of forming floating gates. According to a method of forming a flash memory device in accordance with the present invention, isolation mask patterns are first formed over a semiconductor substrate. Trenches are formed by performing an etching process using the isolation mask patterns. Isolation layers are formed between the isolation mask patterns, including the insides of the respective trenches. The isolation mask patterns are removed. Tunnel dielectric layers and crystallized first conductive layers are sequentially formed over the exposed semiconductor substrate. A dielectric layer and a second conductive layer are formed over the isolation layers and the first conductive layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.