Silicon dioxide cantilever support and method for silicon etched structures
US8026177B2 · kind B2 · utility
1Cited by
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5Claims
0Family size
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Key dates
| Filing date | May 14, 2009 |
| Grant date | Sep 27, 2011 |
| Priority date | — |
| Expiry date | Jan 30, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor layer (2) having therein a cavity (4). A dielectric layer (3) is formed on the semiconductor layer. A plurality of etchant openings (24) extend through the dielectric layer for passage of etchant for etching the cavity. An SiO2 pillar (25) extends from a bottom of the cavity to engage and support a portion of the dielectric layer extending over the cavity. In one embodiment, a cap layer (34) on the dielectric layer covers the etchant openings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.