Nonvolatile semiconductor memory device and method of manufacturing the same

US8026546B2 · kind B2 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Takeshi Murata · Tokyo, JP
• Takeshi Kamigaichi · Yokohama, JP

Key dates

• Filing date: May 1, 2009
• Grant date: Sep 27, 2011
• Expiry date: Jan 22, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B41/35

Abstract

A nonvolatile semiconductor memory device includes a first stack unit with a first selection transistor and a second selection transistor formed on a semiconductor substrate and a second stack unit with first insulating layers and first conductive layers stacked alternately on the upper surface of the first stack unit. The second stack unit includes a second insulating layer formed in contact with side walls of the first insulating layer and the first conductive layer, a charge storage layer formed in contact with the second insulating layer for storing electrical charges, a third insulating layer formed in contact with the charge storage layer, and a first semiconductor layer formed in contact with the third insulating layer so as to extend in a stacking direction, with one end connected to one diffusion layer of the first selection transistor and the other end connected to a diffusion layer of the second selection transistor.