Patent · US Active

Magnetic memory element utilizing spin transfer switching

US8026562B2 · kind B2 · utility

5Cited by

3References

12Claims

0Family size

Assignee

Industrial Technology Research Institute · TW

Inventors

Wei-Chuan Chen · Taipei, TW
Cheng-Tyng Yen
Ding-Yeong Wang · Hengshan, TW

Key dates

Filing date	Sep 16, 2010
Grant date	Sep 27, 2011
Priority date	—
Expiry date	Sep 16, 2030

Classification

Technology area (CPC G)Physics
CPC primaryG11C11/161
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A magnetic memory element includes a pinned layer, a tunneling barrier layer, a free layer and a stabilizing layer. The tunneling barrier layer is disposed on the pinned layer. The free layer is disposed on the tunneling barrier layer. The stabilizing layer is disposed on the free layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.