Through-silicon via structures including conductive protective layers
US8026592B2 · kind B2 · utility
38Cited by
7References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 20, 2009 |
| Grant date | Sep 27, 2011 |
| Priority date | — |
| Expiry date | Aug 1, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Through-Silicon-Via (TSV) structures can include a conductive via through a substrate extending from an upper surface of the substrate to a backside surface of the substrate opposite the upper surface, a conductive protective layer including Ni and/or Co can be at a bottom of the conductive via, and a separate polymer insulating layer can be on the backside surface of the substrate in contact with the conductive protective layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.