Thermal designs of packaged gallium nitride material devices and methods of packaging
US8026596B2 · kind B2 · utility
12Cited by
1References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 15, 2007 |
| Grant date | Sep 27, 2011 |
| Priority date | — |
| Expiry date | May 18, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Gallium nitride material devices and methods associated with the devices are described. The devices may be designed to provide enhanced thermal conduction and reduced thermal resistance. The increased thermal conduction through and out of the gallium nitride devices enhances operability of the devices, including providing excellent RF operation, reliability, and lifetime.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.