Memory sensing devices, methods, and systems
US8027187B2 · kind B2 · utility
5Cited by
2References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2008 |
| Grant date | Sep 27, 2011 |
| Priority date | — |
| Expiry date | Oct 13, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5634
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present disclosure includes devices, methods, and systems for sensing memory, such as resistance variable memory, among other types of memory. One or more embodiments can include a method for generating currents to be used in sensing a memory cell, the method including providing a number of initial currents, and generating a number of reference currents by summing particular combinations of the initial currents.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.