Planar controlled zone microwave plasma system
US8028654B2 · kind B2 · utility
0Cited by
22References
7Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 8, 2009 |
| Grant date | Oct 4, 2011 |
| Priority date | — |
| Expiry date | Sep 8, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H1/475
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An apparatus and method for initiating a process gas plasma. A conductive plate having a plurality of conductive fingers is positioned in a microwave applicator. An arc forms between the conductive fingers to initiate the formation of a plasma. A transport mechanism may convey process materials through the plasma. A spray port may be provided to expel processed materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.