Amorphous nitride release layers for imprint lithography, and method of use
US8029716B2 · kind B2 · utility
5Cited by
5References
24Claims
0Family size
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Key dates
| Filing date | Feb 1, 2008 |
| Grant date | Oct 4, 2011 |
| Priority date | — |
| Expiry date | May 1, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/887
- WIPO fieldOther special machines
- WIPO sectorMechanical engineering
Abstract
Amorphous inorganic nitrides are used as release layers on templates for nanoimprint lithography. Such a layer facilitates the release of a template from a cured, hardened composition into which the template has transferred a pattern, by reducing the adhesion energy between the release layer and the cured, hardened composition. The release layer may include one or more metallic or semiconductor elements such as Al, Mn, B, Co, Ti, Ta, W and Ge.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.