Photopatternable dielectric materials for BEOL applications and methods for use

US8029971B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Robert David Allen · San Jose, US
• Phillip Brock · Sunnyvale, US
• Blake Davis · Hollister, US
• Qinghuang Lin · Yorktown Heights, US
• Robert D. Miller · San Jose, US
• Alshakim Nelson · Fremont, US
• Ratnam Sooriyakumaran · San Jose, US

Key dates

• Filing date: Mar 13, 2008
• Grant date: Oct 4, 2011
• Expiry date: Nov 13, 2029

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S430/126
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

Compositions, a method, and a photopatternable blend. The compositions include a blend of a first and a second polymer. The first polymer is a substituted silsesquioxane copolymer. The second polymer is a substituted silsesquioxane polymer. The second polymer is configured to undergo chemical crosslinking with the first polymer, the second polymer, or a combination thereof, upon exposure to light, thermal energy, or a combination thereof. The compositions include a photosensitive acid generator. The method includes forming a film. The film is patternwise imaged, and at least one region is exposed to radiation. After the imaging, the film is baked, wherein at least one exposed region is rendered substantially soluble. After the baking, the film is developed, wherein a relief pattern remains. The relief pattern is exposed to radiation. The relief pattern is baked. The relief pattern is cured. A chemically amplified positive-tone photopatternable blend is also described.