Method of fabricating a bonded wafer substrate for use in MEMS structures
US8030133B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 30, 2009 |
| Grant date | Oct 4, 2011 |
| Priority date | — |
| Expiry date | Feb 18, 2030 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/115
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of manufacturing a semiconductor device includes providing first and second semiconductor substrates, each having first and second main surfaces opposite to one another. A roughened surface is formed on at least one of the first main surface of the first semiconductor substrate and the second main surface of the second semiconductor substrate. A dielectric layer is formed on the first main surface of the semiconductor substrate and the second semiconductor substrate is disposed on the dielectric layer opposite to the first semiconductor substrate. The second main surface of the second semiconductor substrate contacts the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.